Memory element and method of manufacturing the same, and memory device

US9112149B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Hiroaki Sei · Yokohama, JP
• Shuichiro Yasuda · Boise, US
• Masayuki Shimuta · Yokohama, JP
• Katsuhisa Aratani · Yokohama, JP
• Akira Kouchiyama · Yokohama, JP
• Tetsuya Mizuguchi · Yokohama, JP
• Kazuhiro Ohba · Rifu, JP

Key dates

• Filing date: Dec 5, 2011
• Grant date: Aug 18, 2015
• Expiry date: May 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8416

Abstract

A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.