Patent · US Active

Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon

US9115444B2 · kind B2 · utility

0Cited by

15References

13Claims

0Family size

Assignees

FREIBERGER COMPOUND MATERIALS GMBH · DE
OSRAM Opto Semiconductors GmbH · DE

Inventors

Ferdinand Scholz · Ulm, DE
Peter Brückner · Gundelfingen, DE
Frank Habel · Freiberg, DE
Matthias Peter · Orpund, CH
Klaus Kohler · Eschborn, DE

Key dates

Filing date	Oct 1, 2010
Grant date	Aug 25, 2015
Priority date	—
Expiry date	May 20, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24355
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.