Patent · US Active

Plasma processing apparatus and processing gas supply structure thereof

US9117633B2 · kind B2 · utility

1Cited by
3References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 12, 2011
Grant dateAug 25, 2015
Priority date
Expiry dateJun 25, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T137/8593
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.