Method of improving oxide growth rate of selective oxidation processes
US9117661B2 · kind B2 · utility
3Cited by
31References
13Claims
0Family size
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Key dates
| Filing date | Oct 1, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Oct 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.