High electron mobility transistor with shortened recovery time

US9117742B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Hiroyuki Kinoshita · San Jose, US
• Yoshitsugu Yamamoto · Tokyo, JP
• Tetsuo Kunii · Tokyo, JP

Key dates

• Filing date: Feb 7, 2014
• Grant date: Aug 25, 2015
• Expiry date: Feb 7, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4755

Abstract

A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing a two-dimensional electron gas in the channel layer, a gate electrode, a drain electrode, and a source electrode. Recovery time of a drain current of the semiconductor device is no more than 5 seconds, where the recovery time is defined as the period of time after the semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of the semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds after the stopping of the semiconductor device.