Method for fabricating semiconductor device
US9117847B2 · kind B2 · utility
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12References
10Claims
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Key dates
| Filing date | Oct 17, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes the steps of: sequentially forming agate dielectric layer and a first gate layer on a semiconductor substrate, wherein the gate dielectric layer is between the first gate layer and the semiconductor substrate; forming at least an opening in the first gate layer; forming a first dielectric layer conformally on the semiconductor substrate wherein the first dielectric layer covers the first gate layer; and forming a second gate layer filling the opening and overlapping the first gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.