Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
US9117868B1 · kind B1 · utility
10Cited by
53References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. A bipolar electrostatic chuck is disposed below the plasma source. The bipolar electrostatic chuck is sized to support a substrate carrier having a tape and tape frame. The bipolar electrostatic chuck is configured to control a backside temperature of the substrate carrier prior to and during plasma processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.