Integrated circuit comprising an isolating trench and corresponding method
US9117876B2 · kind B2 · utility
0Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench comprising an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the active area and the encapsulation layer comprising nitrogen or carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.