Method for manufacturing shallow trench isolation
US9117878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2012 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.