Methods of forming stressed fin channel structures for FinFET semiconductor devices

US9117930B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Vimal Kamineni · Mechanicville, US
• Derya Deniz · McKinney, US
• Abner Bello · Clifton Park, US
• Abhijeet Paul · Poway, US
• Robert J. Miller · Yorktown Heights, US
• William J. Taylor, Jr. · Clifton Park, US

Key dates

• Filing date: Aug 6, 2013
• Grant date: Aug 25, 2015
• Expiry date: Nov 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

One method disclosed herein includes forming a first stressed conductive layer within the trenches of a FinFET device and above the upper surface of a fin, forming a second stressed conductive layer above the first stressed conductive layer, removing a portion of the second stressed conductive layer and a portion of the first stressed conductive layer that is positioned above the fin while leaving portions of the first stressed conductive layer positioned within the trenches, and forming a conductive layer above the second stressed conductive layer, the upper surface of the fin and the portions of the first stressed conductive layer positioned within the trenches.