Light emitting element and method of making same
US9117974B2 · kind B2 · utility
0Cited by
6References
7Claims
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Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0≦×≦1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.