Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof
US9121093B2 · kind B2 · utility
0Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 9, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.