Patent · US Active

Compositions and processes for photolithography

US9122159B2 · kind B2 · utility

1Cited by
1References
15Claims
0Family size

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Key dates

Filing dateApr 12, 2012
Grant dateSep 1, 2015
Priority date
Expiry dateJun 6, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/2041
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Topcoat layer compositions suitable for use in forming a topcoat layer over a layer of photoresist include: a matrix polymer which is aqueous alkali soluble; a first additive of mer which is aqueous alkali soluble and comprises polymerized units of a monomer of the following general formula (I):wherein: R1 is hydrogen or a C1 to C6 alkyl or fluoroalkyl group; R2 is a C3 to C8 branched alkylene group; and R3 is a C1 to C4 fluoroalkyl group; and wherein the first additive polymer is present in the composition in an amount less than the matrix polymer, and the first additive polymer has a lower surface energy than a surface energy of the matrix polymer; wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from 75 to 85°. The compositions find particular applicability to immersion lithography processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.