Techniques for plasma processing a substrate
US9123509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2011 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Apr 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.