Process kit for RF physical vapor deposition
US9123511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/35
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.