Donny Young
18Patents
4h-index
40Co-inventors
56Inventor score
Filing activity: Mar 8, 2002 → Aug 15, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7674360B2 | Mechanism for varying the spacing between sputter magnetron and target | Electricity | 6 | Active |
| US7561015B2 | Magnet secured in a two part shell | Emerging Cross-Sectional Technologies | 5 | Active |
| US8790499B2 | Process kit components for titanium sputtering chamber | Electricity | 4 | Active |
| US6875927B2 | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications | Electricity | 4 | Expired |
| US9534286B2 | PVD target for self-centering process shield | Emerging Cross-Sectional Technologies | 4 | Active |
| US8647485B2 | Process kit shield for plasma enhanced processing chamber | Emerging Cross-Sectional Technologies | 2 | Active |
| US8647484B2 | Target for sputtering chamber | Electricity | 2 | Active |
| US9123511B2 | Process kit for RF physical vapor deposition | Chemistry; Metallurgy | 2 | Active |
| US8668815B2 | Process kit for RF physical vapor deposition | Chemistry; Metallurgy | 2 | Active |
| US10763090B2 | High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process | Electricity | 1 | Active |
| US9303311B2 | Substrate processing system with mechanically floating target assembly | Electricity | 1 | Active |
| US8702918B2 | Apparatus for enabling concentricity of plasma dark space | Electricity | 1 | Active |
| US9343274B2 | Process kit shield for plasma enhanced processing chamber | Emerging Cross-Sectional Technologies | 1 | Active |
| US8795488B2 | Apparatus for physical vapor deposition having centrally fed RF energy | Electricity | 1 | Active |
| US9340866B2 | Substrate support with radio frequency (RF) return path | Electricity | 0 | Active |
| US9404174B2 | Pinned target design for RF capacitive coupled plasma | Electricity | 0 | Active |
| US9695502B2 | Process kit with plasma-limiting gap | Electricity | 0 | Active |
| US9255322B2 | Substrate processing system having symmetric RF distribution and return paths | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.