Charge reservoir IGBT top structure
US9123770B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.