Single crystal source-drain merged by polycrystalline material

US9123826B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Eric C. Harley · Lagrangeville, US
• Judson R. Holt · Wappingers Falls, US
• Yue Ke · Fishkill, US
• Rishikesh Krishnan · Poughkeepsie, US
• Timothy J. McArdle · Ballston Lake, US
• Alexander Reznicek · Troy, US
• Dominic J. Schepis · Wappingers Falls, US

Key dates

• Filing date: Mar 24, 2014
• Grant date: Sep 1, 2015
• Expiry date: Mar 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A method of forming a semiconductor structure includes forming a first fin and a second fin on a substrate. A gate structure is formed over a first portion of the first fin and the second fin without covering a second portion of the first fin and the second fin. Single-crystal epitaxial layers are deposited surrounding the second portion of the first fin and the second fin such that the single-crystal epitaxial layer on the first fin does not contact the single-crystal epitaxial layer on the second fin. A polycrystalline layer is then deposited surrounding the single-crystal epitaxial layers, so that the polycrystalline layer contacts the single-crystal epitaxial layer on the first fin and the single-crystal epitaxial layer on the second fin. The single-crystal epitaxial layers and the polycrystalline layer form a merged source-drain region.