Image sensor with stacked grid structure
US9123839B2 · kind B2 · utility
7Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
Among other things, one or more image sensors and techniques for guiding light towards a photodiode are provided. An image sensor comprises a metal grid configured to direct light towards a corresponding photodiode and away from other photodiodes. The image sensor also comprises a dielectric grid and a filler grid over the metal grid to direct light towards the corresponding photodiode and away from other photodiodes, where the filler grid has a different refractive index than the dielectric grid. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.