Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US9129945B2 · kind B2 · utility
7Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.