Wei Ti Lee
38Patents
8h-index
49Co-inventors
75Inventor score
Filing activity: Jan 26, 2000 → May 17, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6656831B1 | Plasma-enhanced chemical vapor deposition of a metal nitride layer | Electricity | 250 | Expired |
| US6528180B1 | Liner materials | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7824743B2 | Deposition processes for titanium nitride barrier and aluminum | Electricity | 22 | Active |
| US7867900B2 | Aluminum contact integration on cobalt silicide junction | Electricity | 17 | Active |
| US7464917B2 | Ampoule splash guard apparatus | Emerging Cross-Sectional Technologies | 16 | Active |
| US8637390B2 | Metal gate structures and methods for forming thereof | Electricity | 12 | Active |
| US8866122B1 | Resistive switching devices having a buffer layer and methods of formation thereof | Electricity | 10 | Active |
| US8895953B1 | Programmable memory elements, devices and methods having physically localized structure | Electricity | 9 | Active |
| US9129945B2 | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance | Electricity | 7 | Active |
| US6716733B2 | CVD-PVD deposition process | Electricity | 6 | Expired |
| US9252359B2 | Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof | Electricity | 4 | Active |
| US7378002B2 | Aluminum sputtering while biasing wafer | Chemistry; Metallurgy | 4 | Expired |
| US8847192B2 | Resistive switching devices having alloyed electrodes and methods of formation thereof | Electricity | 4 | Active |
| US9594035B2 | Silicon germanium thickness and composition determination using combined XPS and XRF technologies | Physics | 3 | Active |
| US10533961B2 | Method and system for non-destructive metrology of thin layers | Physics | 3 | Active |
| US7699295B2 | Ampoule splash guard apparatus | Emerging Cross-Sectional Technologies | 3 | Active |
| US9952166B2 | Silicon germanium thickness and composition determination using combined XPS and XRF technologies | Physics | 3 | Active |
| US7857947B2 | Unique passivation technique for a CVD blocker plate to prevent particle formation | Emerging Cross-Sectional Technologies | 2 | Active |
| US8535443B2 | Gas line weldment design and process for CVD aluminum | Emerging Cross-Sectional Technologies | 2 | Active |
| US10082390B2 | Feed-forward of multi-layer and multi-process information using XPS and XRF technologies | Physics | 2 | Active |
| US9099633B2 | Solid electrolyte memory elements with electrode interface for improved performance | Electricity | 2 | Active |
| US10648802B2 | Feed-forward of multi-layer and multi-process information using XPS and XRF technologies | Physics | 2 | Active |
| US11029148B2 | Feed-forward of multi-layer and multi-process information using XPS and XRF technologies | Physics | 1 | Active |
| US11988502B2 | Characterizing and measuring in small boxes using XPS with multiple measurements | Electricity | 0 | Active |
| US11906451B2 | Method and system for non-destructive metrology of thin layers | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.