Method for fabricating shallow trench isolation structure
US9130014B2 · kind B2 · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.