Method for forming a packaged semiconductor device
US9134366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | May 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a packaged semiconductor device includes integrating a plurality of singulated semiconductor die in a die carrier, and forming one or more interconnect layers on the die carrier. The interconnect layers include at least one of conductive intra-layer structures and inter-layer structures coupled to contact pads on the plurality of singulated semiconductor die. A set of landing pads is formed coupled to a first subset of the contact pads via a first set of the conductive intra-layer structures and inter-layer structures. A set of probe pads is formed coupled to a second subset of the contact pads via a second set of the conductive intra-layer structures and inter-layer structures. The die carrier is singulated to form a plurality of packaged semiconductor devices. The set of probe pads is removed during the singulating the die carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.