Magnetoresistance effect element and magnetic memory
US9135973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2011 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | May 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.