Method and device for reducing coupling noise during read operation
US9136006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Nov 28, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for sensing data in a memory device. The memory device includes a block of memory cells coupled to a plurality of bit lines. The method includes precharging the plurality of bit lines to a first level VPRE. The method includes enabling current flow through selected memory cells on the plurality of bit lines to a reference line or to reference lines coupled to a reference voltage. The method includes preventing a voltage change as a result of the current flow on the bit lines from causing a bit line voltage to pass outside a range between the first level and a second level VKEEP, where the second level is lower than the first level and higher than the reference voltage. The method includes sensing data in the selected memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.