Inventor · Zhubei City, TW

Shuo-Nan Hung

55Patents
6h-index
34Co-inventors
72Inventor score

Filing activity: May 1, 2000 → Sep 14, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8724390B2 Architecture for a 3D memory array Physics 18 Active
US9690650B2 Storage scheme for built-in ECC operations Physics 15 Active
US9136006B2 Method and device for reducing coupling noise during read operation Physics 11 Active
US8760928B2 NAND flash biasing operation Physics 9 Active
US10957384B1 Page buffer structure and fast continuous read Physics 7 Active
US9165680B2 Memory integrated circuit with a page register/status memory capable of storing only a subset of row blocks of main column blocks Physics 6 Active
US8587998B2 3D memory array with read bit line shielding Electricity 5 Active
US8976604B2 Method and apparatus for copying data with a memory array having redundant memory Physics 5 Active
US8976600B2 Word line driver circuit for selecting and deselecting word lines Physics 4 Active
US8638618B2 Decoder for NAND memory Physics 4 Active
US6411120B1 Output buffer drive circuit with initial drive for semiconductor devices Electricity 4 Expired
US8527839B2 On-the-fly repair method for memory Physics 3 Active
US8149624B1 Method and apparatus for reducing read disturb in memory Physics 3 Active
US8542532B2 Memory access method and flash memory using the same Physics 3 Active
US11049585B1 On chip block repair scheme Physics 3 Active
US9773571B2 Memory repair redundancy with array cache redundancy Physics 2 Active
US8982622B2 3D memory array with read bit line shielding Electricity 2 Active
US6930926B2 Method for erasing a flash EEPROM Physics 2 Expired
US11048649B2 Non-sequential page continuous read Physics 2 Active
US10290364B2 Memory integrated circuit with a page register/status memory capable of storing only a subset of row blocks of main column blocks Physics 1 Active
US8665646B2 Method and apparatus for indicating bad memory areas Physics 1 Active
US9805803B2 Circuit for adjusting a select gate voltage of a non-volatile memory during erasure of memory cells based on a well voltage Physics 1 Active
US11249913B2 Continuous read with multiple read commands Physics 1 Active
US8947961B2 Management of non-volatile memory Physics 1 Active
US8526235B2 Method and apparatus for reducing read disturb in memory Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.