Flash memory apparatus and data reading method thereof
US9136008B1 · kind B1 · utility
1Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jul 1, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory apparatus and a data reading method thereof are provided. A boost voltage greater than a pre-charge voltage is provided to a gate of a source discharge transistor when a data reading operation is performed on a memory unit, so as to enhance discharge capability of the source discharge transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.