Memory cell structure and method for forming the same
US9136276B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Apr 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a memory cell structure includes following steps. A substrate including at least a memory cell region defined thereon is provided, and a first gate stack is formed in the memory cell region. A first LDD implantation is performed to form a first LDD at one side of the first gate stack in the memory cell region, and the first LDD includes a first conductivity type. A second LDD implantation is performed to form a second LDD at one side of the first gate stack opposite to the first LDD in the memory cell region, and the second LDD includes the first conductivity type. The first LDD and the second LDD are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.