Patent · US Active

Semiconductor constructions

US9136331B2 · kind B2 · utility

0Cited by
4References
9Claims
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Assignee

Inventors

Key dates

Filing dateApr 10, 2013
Grant dateSep 15, 2015
Priority date
Expiry dateJun 22, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/743
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Some embodiments include semiconductor constructions having semiconductor material patterned into two mesas spaced from one another by at least one dummy projection. The dummy projection has a width along a cross-section of X and the mesas have widths along the cross-section of at least 3X. Some embodiments include semiconductor constructions having a memory array region and a peripheral region adjacent the memory array region. Semiconductor material within the peripheral region is patterned into two relatively wide mesas spaced from one another by at least one relatively narrow projection. The relatively narrow projection has a width along a cross-section of X and the relatively wide mesas have widths along the cross-section of at least 3X.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.