Semiconductor structure and method for manufacturing the same
US9142454B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a substrate, a first conductive structure, a second conductive structure, a dielectric structure, a dielectric layer, a first conductive plug, and a second conductive plug. The first conductive plug passes through only an upper dielectric portion of the dielectric structure, the dielectric layer and a lower dielectric portion of the dielectric structure to physically and electrically contact with the first conductive structure. The second conductive plug passes through the upper dielectric portion, the dielectric layer and the lower dielectric portion to physically and electrically contact with the second conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.