Hybrid bonding mechanisms for semiconductor wafers
US9142517B2 · kind B2 · utility
210Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0504
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of diffusion barrier layer described above provide mechanisms for forming a copper diffusion barrier layer to prevent device degradation for hybrid bonding of wafers. The diffusion barrier layer(s) encircles the copper-containing conductive pads used for hybrid bonding. The diffusion barrier layer can be on one of the two bonding wafers or on both bonding wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.