Methods of manufacturing resistors and structures thereof
US9142547B2 · kind B2 · utility
3Cited by
11References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Jul 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a semiconductor body of a first semiconductive material. A transistor is disposed in the semiconductor body. The transistor includes source and drain regions of a second semiconductive material embedded in the semiconductor body. A resistor overlies a top surface of the semiconductor body and is laterally spaced from the transistor. The resistor is formed from the second semiconductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.