Methods of fabricating nitride-based transistors with an ETCH stop layer

US9142636B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Scott Sheppard · Chapel Hill, US
• Andrew Mackenzie · Cary, US
• Scott Allen · Apex, US
• Richard Peter Smith · Carrboro, US

Key dates

• Filing date: May 13, 2013
• Grant date: Sep 22, 2015
• Expiry date: May 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.