Method for manufacturing finFET
US9142641B1 · kind B1 · utility
12Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a FinFET includes forming a merging spacer, through a plurality of sidewall pattern-transferring processes, and modifying a first interval between adjacent first mandrels as shorter than twice of thicknesses of a nitride layer, which is formed on the first mandrels and contoured thereto, followed by a first spacer being formed on a sidewall thereof, so that a FinFET composed of a plurality of fin-shaped structures having a non-integral multiple of pitches as well as an integral multiple of pitches can be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.