Inventor · 埔鹽鄉, TW

Chao-Hung Lin

59Patents
6h-index
56Co-inventors
75Inventor score

Filing activity: Jan 30, 2001 → May 12, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US9530778B1 Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate Electricity 24 Active
US9349833B1 Semiconductor device and method of forming the same Electricity 19 Active
US9142641B1 Method for manufacturing finFET Electricity 12 Active
US9704737B2 Semiconductor device and method for fabricating the same Electricity 7 Active
US9559164B2 Nanowire transistor device and method for manufacturing nanowire transistor device Electricity 6 Active
US9502410B1 Semiconductor structure and manufacturing method thereof Electricity 6 Active
US7686278B2 Tooth mold retaining frame Human Necessities 6 Active
US8430594B2 Electronic device and assembly structure thereof Emerging Cross-Sectional Technologies 6 Active
US9905464B2 Semiconductor device and method of forming the same Electricity 6 Active
US9455194B1 Method for fabricating semiconductor device Electricity 6 Active
US6257127A Apparatus for making spring-roll skin from dough Human Necessities 6 Expired
US9484263B1 Method of removing a hard mask on a gate Electricity 5 Active
US9589966B2 Static random access memory Electricity 5 Active
US9722078B2 Semiconductor device including fin shaped structure and method for fabricating the same Electricity 3 Active
US9916978B2 Method for fabricating a Fin field effect transistor (FinFET) Electricity 3 Active
US9361782B2 Article anti-lost device and method Electricity 3 Active
US9384978B1 Method of forming trenches Electricity 2 Active
US9947792B2 Semiconductor device and method for fabricating the same Electricity 2 Active
US8218244B2 Miniature zoom lens Physics 2 Active
US9653290B2 Method for manufacturing nanowire transistor device Electricity 2 Active
US9773887B2 Semiconductor device and method for fabricating the same Electricity 2 Active
US9786662B1 Semiconductor device and method for fabricating the same Electricity 2 Active
US9847402B2 Method of using polysilicon as stop layer in a replacement metal gate process Electricity 2 Active
US9881831B2 Method for fabricating semiconductor device including fin shaped structure Electricity 2 Active
US10204504B1 Electronic device and drop warning method Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.