Methods of forming embedded resistors for resistive random access memory cells
US9142764B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
Abstract
Provided are memory cells including resistive switching layers having silicon, oxygen, and nitrogen as well as embedded resistor layers having a metal, silicon, and nitrogen. In some embodiments, silicon may be partially or completely replaced with aluminum. The embedded resistor may also have oxygen. A resistive switching layer directly interfaces an embedded resistor layer of the same cell. A portion of each layer forming this interface may be formed substantially of silicon nitride and may be formed in the same deposition chamber without breaking vacuum. For example, these portions may be formed by sequential atomic layer deposition cycles. However, silicon concentrations in these portions may be different. Specifically, the silicon concentration of the embedded resistor portion may be less than the silicon concentration of the resistive switching layer portion. This variation may be achieved by varying one or more process conditions during fabrication of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.