Use of beam scanning to improve uniformity and productivity of a 2D mechanical scan implantation system
US9147554B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2010 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jan 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.