Topography minimization of neutral layer overcoats in directed self-assembly applications
US9147574B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for patterning a layered substrate that includes loading a substrate into a coater-developer processing system; coating the substrate with a photoresist material layer; patterning the photoresist material layer to form a photoresist pattern; transferring the substrate to a deposition processing system; and depositing a neutral layer over the photoresist pattern and exposed portions of the substrate. The neutral layer can deposited using a gas cluster ion beam (GCIB) process, or an atomic layer deposition (ALD) process, which has minimal topography. The method may further include lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning; depositing a DSA material layer over the neutral layer template; baking the DSA material layer to form a DSA pattern; and developing the DSA material layer to expose the final DSA pattern for subsequent feature etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.