Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the same
US9147680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first and second trench. A first barrier layer is formed overlying the gate dielectric layer. A work function material layer is formed within the trenches. The work function material layer and the first barrier layer are recessed in the first and second trench. The work function material layer and the first barrier layer form a beveled surface. The gate dielectric layer is recessed in the first and second trench. A conductive gate electrode material is deposited such that it fills the first and second trench. The conductive gate electrode material is recessed in the first and second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.