Methods of forming ferroelectric capacitors
US9147689B1 · kind B1 · utility
7Cited by
7References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a ferroelectric capacitor includes forming inner conductive capacitor electrode material over a substrate. After forming the inner electrode material, an outermost region of the inner electrode material is treated to increase carbon content in the outermost region from what it was prior to the treating. After the treating, ferroelectric capacitor dielectric material is formed over the treated outermost region of the inner electrode material. Outer conductive capacitor electrode material is formed over the ferroelectric capacitor dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.