Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
US9147803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jan 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.