Tunnel magnetoresistive effect element and random access memory using same
US9153306B2 · kind B2 · utility
3Cited by
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15Claims
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Key dates
| Filing date | Nov 8, 2011 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Nov 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.