Passive capacitively-coupled electrostatic (CCE) probe method for detecting plasma instabilities in a plasma processing chamber
US9153421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Jun 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.