Patent · US Active

Replacement metal gate FinFET

US9153447B2 · kind B2 · utility

5Cited by

8References

5Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Hemanth Jagannathan · Niskayuna, US
Sanjay C. Mehta · Niskayuna, US
Junli Wang · Slingerlands, US
Chun-Chen Yeh · Clifton Park, US
Stefan Schmitz · Stuttgart, DE

Key dates

Filing date	Nov 9, 2012
Grant date	Oct 6, 2015
Priority date	—
Expiry date	Jul 5, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.