Method of fabricating a metal grid for semiconductor device
US9153620B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Mar 3, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Apr 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.