Semiconductor devices comprising a fin
US9153657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2014 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Oct 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
A semiconductor device may include a fin disposed over a workpiece. The fin may include: a first semiconductive material disposed over the workpiece; an oxide of the first semiconductive material disposed over the first semiconductive material; a second conductive material disposed over and spaced apart from the oxide of the first semiconductive material; a first insulating material disposed around and lining the second semiconductive material; a conductive material disposed around the first insulating material; and a second insulating material disposed between the oxide of the first semiconductive material and a portion of the conductive material facing the workpiece, the second insulating material further lining sidewalls of the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.