Resistance change memory element and resistance change memory
US9153779B2 · kind B2 · utility
6Cited by
1References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.