Compositions and methods for the selective removal of silicon nitride
US9158203B2 · kind B2 · utility
1Cited by
20References
19Claims
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Key dates
| Filing date | Jul 15, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Jul 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.