Thermo programmable resistor based ROM
US9159413B2 · kind B2 · utility
3Cited by
76References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.