Replacement low-K spacer
US9159567B1 · kind B1 · utility
3Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Apr 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.